Use of sublimation epitaxy for obtaining volume 3C-SiC crystals
โ Scribed by A. A. Lebedev; P. L. Abramov; A. S. Zubrilov; E. V. Bogdanova; S. P. Lebedev; N. V. Seredova; A. S. Tregubova
- Book ID
- 111450741
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2010
- Tongue
- English
- Weight
- 1000 KB
- Volume
- 36
- Category
- Article
- ISSN
- 1063-7850
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The role of 3C-SiC intermediate layers in III-nitride crystal growth has been studied by observing IIInitride epilayers grown on Si substrates. We found that better quality epilayers were obtained by using such intermediate layers than by direct growth on Si substrates. In the case of III-nitride ep