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Use of pt gate metallization to reduce gate leakage current in GaAs MESFETs

✍ Scribed by F. Ren; A. B. Emerson; S. J. Pearton; W. S. Hobson; T. R. Fullowan; J. Lothian

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Dependence of ionization current on gate

✍ Canali, C.; Neviani, A.; Tedesco, C.; Zanoni, E.; Centronio, A.; Lanzieri, C. 📂 Article 📅 1993 🏛 IEEE 🌐 English ⚖ 409 KB

Suppression of gate leakage current in n

✍ Nagayama, A.; Yamauchi, S.; Hariu, T. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 126 KB

Shot noise in GaAs metal semiconductor f

✍ W.A. Strifler; B.T. Pugh; R.D. Remba 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 199 KB

Effect of CVD-SiO2 film on reliability o

✍ Saito, Y.; Hashinaga, T.; Nakajima, S. 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 408 KB

Measurement of mobility profile in GaAs

✍ Xiang Qi; Wang Lichun; Luo Jinsheng 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 326 KB

Monte-Carlo simulation of gate leakage c

✍ V. Pankratov; V. Ryzhii 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 148 KB