In this paper a neural network based technique has been developed to model a plasma enhanced chemical vapor deposition (PECVD) silicon nitride process. The study covers the range of normal input parameters used for PECVD silicon nitride ยฎlms. These ยฎlm compositions range from nitrogen-rich to silico
Use of neural network to model the deposition rate of PECVD-silicon nitride films
โ Scribed by Kim, Byungwhan; Park, Kyungyoung; Lee, Dukwoo
- Book ID
- 111895318
- Publisher
- Institute of Physics
- Year
- 2005
- Tongue
- English
- Weight
- 188 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0963-0252
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A prediction model of charge density of silicon nitride (SiN) films was constructed by using a generalized regression neural network (GRNN). The SiN film was deposited by a plasma enhanced chemical vapor deposition (PECVD) system and the deposition process was characterized by means of a statistical
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