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Use of germanium interfacial layer for the hetero-epitaxial growth of CdTe on Si substrates

✍ Scribed by Wen-Sheng Wang; Ishwara Bhat


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
394 KB
Volume
138
Category
Article
ISSN
0022-0248

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Investigation of the Interfacial Region
✍ Koch, M. H.; Mar, G. L.; Hartmann, A. J.; Lamb, R. N. πŸ“‚ Article πŸ“… 1996 πŸ› John Wiley and Sons 🌐 English βš– 362 KB πŸ‘ 2 views

The growth process of ZnO films on Si(100) by single-sour~e chemical vapour deposition (CVD) was investigated. During the initial stages of growth (film thickness <30A), oxidation of the Si substrate was observed ihich resulted in an interfacial region consisting of ZnO and Si oxides. For film thick