๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Uptake of light elements of nanoporous layers formed by helium ion implantation

โœ Scribed by P.B. Johnson; V.J. Kennedy; A. Markwitz; C.R. Varoy; N. Dytlewski; K.T. Short


Book ID
114167263
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
157 KB
Volume
206
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Evolution of buried compound layers form
โœ Alice E. White; Kenneth T. Short; Yong-Fen Hsieh; Robert Hull ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 1010 KB

The coalescence of buried silicide layers formed by high dose implantation in silicon and high temperature annealing occurs via a precipitate coarsening mechanism that is different in ( 100) and ( 111) silicon. The results of an extensive study of these phenomena are summarized and compared with the