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Unterminated 4H-SiC Schottky barrier diodes with novel HfNxBy electrodes

✍ Scribed by A. Kumta; Rusli; Chin-Che Tin; L. Valeri; S.F. Yoon; J. Ahn


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
188 KB
Volume
83
Category
Article
ISSN
0167-9317

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Using current-voltage measurements, we have investigated the electrical behavior of molybdenum on 4H-SiC Schottky diodes of various areas and having different edge terminations consisting of high resistivity guard rings manufactured by carbon ion-implantation. Both forward and reverse electrical ch