✦ LIBER ✦

Unintentional incorporation of B, As, and O impurities in GaN grown by molecular beam epitaxy

✍ Scribed by Hyonju Kim; Fredrik J. Fälth; Thorvald G. Andersson

Book ID: 107452668
Publisher: Springer US
Year: 2001
Tongue: English
Weight: 138 KB
Volume: 30
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-001-0122-z

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Excitonic recombination in GaN grown by

Excitonic recombination in GaN grown by molecular beam epitaxy

✍ Smith, M.; Chen, G. D.; Li, J. Z.; Lin, J. Y.; Jiang, H. X.; Salvador, A.; Kim, 📂 Article 📅 1995 🏛 American Institute of Physics 🌐 English ⚖ 366 KB

Radiative and Nonradiative Exciton Lifet

Radiative and Nonradiative Exciton Lifetimes in GaN Grown by Molecular Beam Epitaxy

✍ G. Pozina; J.P. Bergman; B. Monemar; B. Heying; J.S. Speck 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 86 KB 👁 2 views

Luminescence properties and defects in G

Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy

✍ Calleja, E.; Sánchez-García, M. A.; Sánchez, F. J.; Calle, F.; Naranjo, F. B.; M 📂 Article 📅 2000 🏛 The American Physical Society 🌐 English ⚖ 640 KB

Carrier Confinement in AlGaN/GaN Heteros

Carrier Confinement in AlGaN/GaN Heterostructures Grown by Plasma Induced Molecular Beam Epitaxy

✍ Dimitrov, R. ;Wittmer, L. ;Felsi, H. P. ;Mitchell, A. ;Ambacher, O. ;Stutzmann, 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 92 KB 👁 2 views

A study of cracking in GaN grown on sili

A study of cracking in GaN grown on silicon by molecular beam epitaxy

✍ R. Jothilingam; M. W. Koch; J. B. Posthill; G. W. Wicks 📂 Article 📅 2001 🏛 Springer US 🌐 English ⚖ 698 KB

Optimisation of the Blue Emission from A

Optimisation of the Blue Emission from As-Doped GaN Films Grown by Molecular Beam Epitaxy

✍ Foxon, C.T. ;Novikov, S.V. ;Li, T. ;Campion, R.P. ;Winser, A.J. ;Harrison, I. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 125 KB 👁 2 views