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Undoped semi-insulating LEC GaAs: a model and a mechanism

✍ Scribed by Oliver, J.R.; Fairman, R.D.; Chen, R.T.; Yu, P.W.

Book ID
126612151
Publisher
The Institution of Electrical Engineers
Year
1981
Tongue
English
Weight
473 KB
Volume
17
Category
Article
ISSN
0013-5194

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Photoluminescence and photoacoustic spectroscopy were used to investigate the effect of post-growth annealing carried out to improve the uniformity of Czochralski-grown semi-insulating GaAs. Single-and multi-step, ingot-and waferannealed crystals were studied. It is shown that wafer-annealed crystal