Carbon in undoped LEC semi-insulating GaAs; origin and melt composition dependence

On the Reasons Leading to an Appearance

On the Reasons Leading to an Appearance of Correlated and Anticorrelated Dependences of the Minority Carrier Lifetime on the Dislocation Density in Undoped Semi-Insulating “Stoichiometric” GaAs Crystals

✍ Dr.; Prof. K. D. Glinchuk; Dr.; Prof. A. V. Prokhorovich 📂 Article 📅 1995 🏛 John Wiley and Sons 🌐 English ⚖ 227 KB 👁 2 views

It is shown that in undoped semi-insulating GaAs crystals grown under the stoichiometric conditions both correlated and anticorrelated dependences of the minority carrier lifetime T on the dislocation density Nd could be observed. The above-pointed effect is connected with a slight excess of Ga atom