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Undoped semi-insulating GaAs crystals grown by a modified low pressure LEC method

โœ Scribed by Prof. P. G. Mo; X. Q. Fan; Y. D. Zhou; J. Wu


Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
463 KB
Volume
24
Category
Article
ISSN
0232-1300

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โœ K. Jacob; Ch. Frank; M. Neubert; P. Rudolph; W. Ulrici; M. Jurisch; J. Korb ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 164 KB ๐Ÿ‘ 2 views

In the past it has been demonstrated that the carbon concentration of large semi-insulating (SI) GaAs single crystals grown by the conventional liquid encapsulation Czochralski (LEC) technique can be controlled by several methods including variations of growth parameters. It was the aim of the prese