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Ultrathin Strained-Ge Channel P-MOSFETs With High-$K$ /Metal Gate and Sub-1-nm Equivalent Oxide Thickness

✍ Scribed by Hashemi, O.; Chern, W.; Lee, H.; Teherani, J. T.; Zhu, Y.; Gonsalvez, J.; Shahidi, G. G.; Hoyt, J. L.

Book ID: 120068387
Publisher: IEEE
Year: 2012
Tongue: English
Weight: 357 KB
Volume: 33
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2195631

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