✦ LIBER ✦
Gate-First Metal-Gate/High- n-MOSFETs With Deep Sub-nm Equivalent Oxide Thickness (0.58 nm) Fabricated With Sulfur-Implanted Schottky Source/Drain Using a Low-Temperature Process
✍ Scribed by Suzuki, M.; Nishi, Y.; Kinoshita, A.
- Book ID
- 114620675
- Publisher
- IEEE
- Year
- 2011
- Tongue
- English
- Weight
- 230 KB
- Volume
- 58
- Category
- Article
- ISSN
- 0018-9383
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