Ultra-wideband square-slot antenna

✍ Scribed by Horng-Dean Chen; Jin-Sen Chen; Jui-Ni Li

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 113 KB
• Volume: 48
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.21391

✦ Synopsis

The intrinsic characteristics of LDMOS transistor amplifier can be extracted by removing the simulated characteristics of the input side and output side of test fixtures from the overall measured characteristics. In addition, impedance-matching networks are designed with these extracted S-parameters of the LDMOS transistor amplifier. The transistor used in this work is an MRF21030 LD-MOS 30W transistor provided by Freescale Semiconductor, Inc., and biased such that I DS_DQ is equal to 200 mA. Figures 4(a) and 4(b) show the measured and simulated S-parameters of the impedance matched transistor amplifier in the frequency range from 2.0 to 2.3 GHz. The maximum deviations of the measured ͉S 11 ͉, ͉S 21 ͉, and ͉S 22 ͉ from the simulated ͉S 11 ͉, ͉S 21 ͉, and ͉S 22 ͉ are 0.66, 0.17, and 0.13 dB, respectively. The simulated characteristics of impedance matching blocks can accurately predict the measured ones, as shown in Figures 4(a) and 4(b).

5. CONCLUSION

In this paper, we have presented a method of extracting 3D field simulation parameters of RF-band transistor amplifier test fixtures and demonstrated that a circuit model of the test fixtures can be constructed via pure 3D field simulation using the extracted material constants. The developed circuit model predicts measurement results within 0.5 dB.