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Ultra-thin gate oxide growth on hydrogen-terminated silicon surfaces

✍ Scribed by M. Hirose; M. Hiroshima; T. Yasaka; M. Takakura; S. Miyazaki

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
559 KB
Volume
22
Category
Article
ISSN
0167-9317

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πŸ“œ SIMILAR VOLUMES

One-Step Growth of ca. 2–15 nm Polymer T
One-Step Growth of ca. 2–15 nm Polymer Thin Films on Hydrogen-Terminated Silicon
✍ Robert B. Blake; Lei Pei; Li Yang; Michael V. Lee; Hiram J. Conley; Robert C. Da πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 172 KB

## Abstract Here we show direct polymer growth on hydrogen‐terminated silicon (Siο£ΏH) as a one‐step process. Siο£ΏH is immersed in a heated solution of an initiator, a monomer, and a crosslinker. The resulting polymer films are 2–15 nm thick, the thickness can be tuned by varying reaction conditions,