✦ LIBER ✦

Type II band alignment and exciton wave functions in Si/Si1−xGex quantum wells

✍ Scribed by C Penn; P.C.M Christianen; F Schäffler; J.C Maan; G Bauer

Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 156 KB
Volume: 7
Category: Article
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(99)00381-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Excitons in type-I type-II strained Si/S

Excitons in type-I type-II strained Si/Si1–xGex graded quantum well

✍ J. Costa e Silva; J. A. K. Freire; V. N. Freire; G. A. Farias; E. F. da Silva Jr 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 151 KB

Wave function engineering in W designed

Wave function engineering in W designed strained-compensated Si/Si1−xGex/Si type II quantum wells for 1.55 μm optical properties

✍ N. Sfina; J.-L. Lazzari; F. Ben Zid; A. Bhouri; M. Said 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 341 KB

Strain-induced lateral band gap modulati

Strain-induced lateral band gap modulation in Si1−xGex/Si quantum well and quantum wire structures

✍ N. Usami; H. Sunamura; T. Mine; S. Fukatsu; Y. Shiraki 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 436 KB

Field effect on electron-hole recombinat

Field effect on electron-hole recombination in Si/Si1−xGex/Si quantum wells having a W-like type II potential profile

✍ N. Sfina; J.-L. Lazzari; M. Said 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 145 KB

Thermal relaxation processes in Si1−xGex

Thermal relaxation processes in Si1−xGex/Si quantum wells studied by inter-subband and inter-valence band spectroscopy

✍ B Adoram; D Krapf; M Levy; R Beserman; S Thomas; K.L Wang; J Shappir; A Sa'ar 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 91 KB

In this paper we present a systematic experimental investigation of the optical properties associated with inter-subband and inter-valence band transitions in p-type pseudomorphic Si1-xGex=Si multiple quantum-wells structure under high-temperature thermal treatments. The structure exhibits two types

Intersubband absorption in modulation do

Intersubband absorption in modulation doped p-type Si1-xGex quantum wells: theory and experiment

✍ T. Fromherz; E. Koppensteiner; M. Helm; G. Bauer; J.F. Nützel; G. Abstreiter 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 226 KB

A study of intersubband infrared absorption in modulation doped p-type \(\mathrm{Si} / \mathrm{SiGe}\) quantum wells is presented for SiGe wells with thicknesses between \(22 \AA\) and \(64 \AA\) and \(\mathrm{Ge}\) contents in the range from \(23 \%\) to \(58 \%\). The peak positions of the absorpt