Thermal relaxation processes in Si1−xGex/Si quantum wells studied by inter-subband and inter-valence band spectroscopy
✍ Scribed by B Adoram; D Krapf; M Levy; R Beserman; S Thomas; K.L Wang; J Shappir; A Sa'ar
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 91 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
In this paper we present a systematic experimental investigation of the optical properties associated with inter-subband and inter-valence band transitions in p-type pseudomorphic Si1-xGex=Si multiple quantum-wells structure under high-temperature thermal treatments. The structure exhibits two types of optical absorption lines: the ÿrst obeys the inter-subband selection rules and is assigned to heavy-hole transitions while the second obeys the inter-valence band selection rules and is assigned to transitions between a heavy hole and a mixed spin split o and light-hole state. Annealing treatments reveal two kinds of thermally activated processes. The ÿrst process is assigned to strain relaxation while the second is assigned to Si and Ge inter-di usion. Raman spectroscopy provides additional support to our interpretation of the activation processes. We propose a quantitative model, based on the Bir-Pikus deformation potential to explain the experimental results.