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Strain-induced lateral band gap modulation in Si1−xGex/Si quantum well and quantum wire structures

✍ Scribed by N. Usami; H. Sunamura; T. Mine; S. Fukatsu; Y. Shiraki


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
436 KB
Volume
150
Category
Article
ISSN
0022-0248

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Intersubband absorption in modulation do
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A study of intersubband infrared absorption in modulation doped p-type \(\mathrm{Si} / \mathrm{SiGe}\) quantum wells is presented for SiGe wells with thicknesses between \(22 \AA\) and \(64 \AA\) and \(\mathrm{Ge}\) contents in the range from \(23 \%\) to \(58 \%\). The peak positions of the absorpt