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Two-dimensional electron-gas density in AlXGa1-XN/GaN heterostructure field-effect transistors

✍ Scribed by Maeda, Narihiko; Nishida, Toshio; Kobayashi, Naoki; Tomizawa, Masaaki


Book ID
111902453
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
333 KB
Volume
73
Category
Article
ISSN
0003-6951

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The behavior of two-dimensional electron gas density, induced by spontaneous and piezoelectric polarization, in non-intentionally doped GaN=AlxGa1-xN=GaN heterostructures with very thin barriers has been studied. The sheet carrier concentration, Ns, induced by polarization charges was determined sel