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Tunnelling transport in Al-n-GaSb Schottky diodes

โœ Scribed by Subekti, A.; Tansley, T.L.; Goldys, E.M.

Book ID
114537464
Publisher
IEEE
Year
1998
Tongue
English
Weight
61 KB
Volume
45
Category
Article
ISSN
0018-9383

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โœ A.Y. Polyakov; M. Stam; A.G. Milnes; T.E. Schlesinger ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 592 KB

The electrical properties of Schottky diodes and p-n junctions on GaSb ((100), doped with 2 x 10 t7 cm-~ tellurium) were examined. Capacitance-voltage measurements at 300 K show barrier heights of 0.65 eV (Al), 0.6 eV (Au, In, Pd), 0.5 eV (Ga) and 0.42 eV (Sb). The barrier heights tend to track the