๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Reversible degradation effects in GaSb tunnel diodes

โœ Scribed by W.N. Carr


Book ID
103388554
Publisher
Elsevier Science
Year
1962
Tongue
English
Weight
239 KB
Volume
5
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Radiative Recombination Effects in GaSb
โœ T. Deutsch; R. C. Ellis jr.; D. M. Warschauer ๐Ÿ“‚ Article ๐Ÿ“… 1963 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 277 KB

## Abstract Forward biased GaSb diodes made by diffusing zinc into nโ€type GaSb show emission lines at 0.72 eV or 0.78 eV at 77 ยฐK. At current densities of approximately 60000 A cm^โˆ’2^ a diode showing a d.c. emission at 0.72 eV radiates mainly at 0.78 eV. Some narrowing of the 0.72 eV line has been