Radiative Recombination Effects in GaSb Diodes at High Current Densities

✍ Scribed by T. Deutsch; R. C. Ellis jr.; D. M. Warschauer

• Publisher: John Wiley and Sons
• Year: 1963
• Tongue: English
• Weight: 277 KB
• Volume: 3
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.19630030605

✦ Synopsis

Abstract

Forward biased GaSb diodes made by diffusing zinc into n‐type GaSb show emission lines at 0.72 eV or 0.78 eV at 77 °K. At current densities of approximately 60000 A cm^−2^ a diode showing a d.c. emission at 0.72 eV radiates mainly at 0.78 eV. Some narrowing of the 0.72 eV line has been seen. A model to explain the observed effects in terms of the band structure of GaSb is presented and some implications of the band structure for possible laser action are discussed.