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On the analytical treatment of Auger recombination in silicon devices at high current density: N.G. Nilsson, I.V. Grekhov, A.E. Otblesk, N.G. Nilsson, J. Dziewior, W. Schmid Physics Department, Royal Institute of Technology, S-100 44 Stockholm 70, Sweden


Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
104 KB
Volume
21
Category
Article
ISSN
0038-1101

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