The electrical properties of Schottky diodes and p-n junctions on GaSb ((100), doped with 2 x 10 t7 cm-~ tellurium) were examined. Capacitance-voltage measurements at 300 K show barrier heights of 0.65 eV (Al), 0.6 eV (Au, In, Pd), 0.5 eV (Ga) and 0.42 eV (Sb). The barrier heights tend to track the
โฆ LIBER โฆ
The electrical characteristics of Ni/n-GaSb Schottky diode
โ Scribed by Huang, Wen-Chang; Lin, Tien-Chai; Horng, Chia-Tsung; Li, Yu-Huang
- Book ID
- 120426581
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 630 KB
- Volume
- 16
- Category
- Article
- ISSN
- 1369-8001
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