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The electrical characteristics of Ni/n-GaSb Schottky diode

โœ Scribed by Huang, Wen-Chang; Lin, Tien-Chai; Horng, Chia-Tsung; Li, Yu-Huang


Book ID
120426581
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
630 KB
Volume
16
Category
Article
ISSN
1369-8001

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๐Ÿ“œ SIMILAR VOLUMES


Electrical properties of GaSb Schottky d
โœ A.Y. Polyakov; M. Stam; A.G. Milnes; T.E. Schlesinger ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 592 KB

The electrical properties of Schottky diodes and p-n junctions on GaSb ((100), doped with 2 x 10 t7 cm-~ tellurium) were examined. Capacitance-voltage measurements at 300 K show barrier heights of 0.65 eV (Al), 0.6 eV (Au, In, Pd), 0.5 eV (Ga) and 0.42 eV (Sb). The barrier heights tend to track the

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Schottky diodes were fabricated by depositing gold on a single grain and on grains incorporating a grain boundary of tellurium-doped GaSb crystals grown by the vertical Bridgman method. The barrier height (ยขB.), series resistance (R), dark saturation current density (Js) and the ideality factor (n)