Electrical transport characteristics of Au/n-GaN Schottky diodes
✍ Scribed by Z. Benamara; B. Akkal; A. Talbi; B. Gruzza
- Book ID
- 108215992
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 107 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0928-4931
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky diodes have been measured in 40-320 K temperature range, and analyzed in terms of thermionic emission theory by incorporating the concept of barrier inhomogeneity at the metal/semiconductor interface through a Gaussian distribution functi
## Abstract The electrical and structural properties of molybdenum (Mo) Schottky contact to n‐type GaN (4.07 × 10^18^ cm^–3^) have been investigated before and after annealing at 600 °C. Measurements show that the Schottky barrier height of the as‐deposited sample was 0.81 eV (__I__–__V__) and 1.02