Electrical properties of GaSb Schottky d
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A.Y. Polyakov; M. Stam; A.G. Milnes; T.E. Schlesinger
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Article
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1992
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Elsevier Science
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English
โ 592 KB
The electrical properties of Schottky diodes and p-n junctions on GaSb ((100), doped with 2 x 10 t7 cm-~ tellurium) were examined. Capacitance-voltage measurements at 300 K show barrier heights of 0.65 eV (Al), 0.6 eV (Au, In, Pd), 0.5 eV (Ga) and 0.42 eV (Sb). The barrier heights tend to track the