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Tunneling resistance and magnetoresistance of Al-oxide-Al tunnel junctions

✍ Scribed by R. Steiner; K. Keck; H. Wiesner


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
257 KB
Volume
63
Category
Article
ISSN
0038-1098

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~urrent -voltage measurements on high conductance Nb/AIOx/AI/AIOx/Nb tunnel junction devices show a step In the sub-gap structure corresponding to the difference in the energy gaps V=2(!lNb-!lAI) of the two sup~.rcC?nduct~.rs. The measured !lAI is large. a~d'persists to temperature considerably in e