The oxidation of thin AI layers on niobium has been investigated by reflectivity measurements. The simple experimental set-up allows for in situ observation of tunnel barrier growth with good time resolution. The dynamics of the AI203 layer growth is examined as a function of 02 pressure. The observ
Tunneling Conductance of Al–Al Oxide–p-Bi2Te3 Junctions
✍ Scribed by J. Nagao; H. Unama; E. Hatta; K. Mukasa
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 155 KB
- Volume
- 213
- Category
- Article
- ISSN
- 0370-1972
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Temperature variation of electrical conductivity in two crystallographic directions (s k and s c ) of p-Bi 2 Te 3 crystals has been measured. The anisotropic factor, s k =s c , shows an exponential form involving an activation energy. This can be interpreted as an effect of defects between the layer
The coordination and speciation of selenate (SeO(4)) and sulfate (SO(4)) on goethite and Al oxide were studied using Raman and ATR-FTIR spectroscopy. Raman spectra were collected from pastes of suspensions containing 4 mM SeO(4) or SO(4). For SO(4), complementary data were collected by ATR-FTIR spec