Extreme critical temperature enhancement of Al by tunneling in Nb/AOx/Al/AlOx/Nb tunnel junctions

✍ Scribed by M.G. Blamire; E.C.G. Kirk; J.E. Evetts; T.M. Klapwijk

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 336 KB
• Volume: 165-166
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/s0921-4526(09)80377-3

✦ Synopsis

~urrent -voltage measurements on high conductance Nb/AIOx/AI/AIOx/Nb tunnel junction devices show a step In the sub-gap structure corresponding to the difference in the energy gaps V=2(!lNb-!lAI) of the two sup~.rcC?nduct~.rs. The measured !lAI is large. a~d'persists to temperature considerably in excess of the eq~lhb:lum cntlcal temper~ture of the AI. This IS Interpreted as arising from a tunnel-induced gap enhancement which IS an order of magnitude larger than has been seen previously.