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Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier

✍ Scribed by D Chiba; F Matsukura; H Ohno

Book ID
108240669
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
409 KB
Volume
21
Category
Article
ISSN
1386-9477

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We report here on in-plane anisotropy observed in the tunneling magnetoresistance of (Ga,Mn)As/n + -GaAs Esaki diode contacts and in the spin polarization generated in lateral all-semiconductor, all-electrical spin injection devices, employing such Esaki-diode structures as spin aligning contacts. T