✦ LIBER ✦
In-plane anisotropy of tunneling magnetoresistance and spin polarization in lateral spin injection devices with (Ga,Mn)As/GaAs spin-Esaki diode contacts
✍ Scribed by M. Ciorga; A. Einwanger; U. Wurstbauer; D. Schuh; W. Wegscheider; D. Weiss
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 374 KB
- Volume
- 42
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
We report here on in-plane anisotropy observed in the tunneling magnetoresistance of (Ga,Mn)As/n + -GaAs Esaki diode contacts and in the spin polarization generated in lateral all-semiconductor, all-electrical spin injection devices, employing such Esaki-diode structures as spin aligning contacts. The uniaxial component of the registered anisotropies, observed along [1 1 0] directions, does switch its sign as an effect of the applied bias, however the switching occurs at different bias values for magnetoresistance and for spin polarization cases.