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Tunneling anisotropic magnetoresistance effect in a p+-(Ga,Mn)As/n+-GaAs Esaki diode

✍ Scribed by Ciorga, M. ;Einwanger, A. ;Sadowski, J. ;Wegscheider, W. ;Weiss, D.

Book ID
105364087
Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
214 KB
Volume
204
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

We have performed magnetotransport experiments on p^+^‐(Ga,Mn)As/n^+^‐GaAs Esaki diode devices. The spin‐valve‐like signal was observed in these devices in an in‐plane magnetic field configuration due to Tunneling Anisotropic Magnetoresistance effect. The pattern of the observed magnetic reversal process strongly depends on the observed magnetic anisotropy of the (Ga,Mn)As layer – depending on its type the sign of the spin‐valve‐like signal can be changed by a simple rotation of the magnetic field by 90Β° or not. The type of the anisotropy is found to be strongly shaped, in a random way, during processing of the wafer. (Β© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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In-plane anisotropy of tunneling magneto
In-plane anisotropy of tunneling magnetoresistance and spin polarization in lateral spin injection devices with (Ga,Mn)As/GaAs spin-Esaki diode contacts
✍ M. Ciorga; A. Einwanger; U. Wurstbauer; D. Schuh; W. Wegscheider; D. Weiss πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 374 KB

We report here on in-plane anisotropy observed in the tunneling magnetoresistance of (Ga,Mn)As/n + -GaAs Esaki diode contacts and in the spin polarization generated in lateral all-semiconductor, all-electrical spin injection devices, employing such Esaki-diode structures as spin aligning contacts. T