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ElectricalElectronSpin Injection with a p+-(Ga,Mn)As/n+-GaAs Tunnel Junction

✍ Scribed by M. Kohda; Y. Ohno; K. Takamura; F. Matsukura; H. Ohno

Book ID
110433636
Publisher
Springer
Year
2003
Tongue
English
Weight
97 KB
Volume
16
Category
Article
ISSN
0896-1107

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## Abstract We have performed magnetotransport experiments on p^+^‐(Ga,Mn)As/n^+^‐GaAs Esaki diode devices. The spin‐valve‐like signal was observed in these devices in an in‐plane magnetic field configuration due to Tunneling Anisotropic Magnetoresistance effect. The pattern of the observed magneti

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We report here on in-plane anisotropy observed in the tunneling magnetoresistance of (Ga,Mn)As/n + -GaAs Esaki diode contacts and in the spin polarization generated in lateral all-semiconductor, all-electrical spin injection devices, employing such Esaki-diode structures as spin aligning contacts. T