✦ LIBER ✦

Tunnel-oxide breakdown characteristics of floating-gate-type EEPROM

✍ Scribed by Kazuo Sato; Yoshiki Fukuzaki; Shinichi Hatakeyama; Nobuyuki Ikeda

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Breakdown characteristics of gate and tu

✍ Christophe Monsérié; Patrick Mortini; Gérard Ghibaudo; Georges Pananakakis 📂 Article 📅 1993 🏛 John Wiley and Sons 🌐 English ⚖ 395 KB

Modelling of write/erase and charge rete

✍ Anjan Bhattacharyya 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 704 KB

A theoretical model for the current-volt

✍ Liong, L.C.; Liu, P.-C. 📂 Article 📅 1993 🏛 IEEE 🌐 English ⚖ 524 KB

Degradation of thin tunnel gate oxide un

✍ Young-Bog Park; Schroder, D.K. 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 241 KB

Reduction of charge-transport characteri

✍ Dong-Won Kim; Prins, F.E.; Taehoon Kim; Sungbo Hwang; Lee, C.H.; Dim-Lee Kwong; 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 403 KB

Bulk tunneling contribution to the rever

✍ R. Adar; Y. Nemirovsky; I. Kidron 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 508 KB