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Modelling of write/erase and charge retention characteristics of floating gate EEPROM devices

✍ Scribed by Anjan Bhattacharyya

Publisher: Elsevier Science
Year: 1984
Tongue: English
Weight: 704 KB
Volume: 27
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(84)90009-1

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