𝔖 Bobbio Scriptorium
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Bulk tunneling contribution to the reverse breakdown characteristics of InSb gate controlled diodes

✍ Scribed by R. Adar; Y. Nemirovsky; I. Kidron


Book ID
107856847
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
508 KB
Volume
30
Category
Article
ISSN
0038-1101

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