✦ LIBER ✦
Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide
✍ Scribed by Dong-Won Kim; Prins, F.E.; Taehoon Kim; Sungbo Hwang; Lee, C.H.; Dim-Lee Kwong; Banerjee, S.K.
- Book ID
- 114616896
- Publisher
- IEEE
- Year
- 2003
- Tongue
- English
- Weight
- 403 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0018-9383
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