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Tunnel and Sehottky Current in Dielectric Thin Films Considering Film Thickness Fluctuations

โœ Scribed by J. Antula


Publisher
John Wiley and Sons
Year
1967
Tongue
English
Weight
254 KB
Volume
24
Category
Article
ISSN
0370-1972

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โœ Hiroshi Nakatsuji; Akira Shimizu; Yasuhisa Omura ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 130 KB

This paper describes a simplified model of the direct tunneling current characteristics of thin SiO 2 films. The theoretical direct tunneling current calculations take into account the dark space at the Si/SiO 2 interface in a simple manner. Theoretical curves comparatively well reproduce experiment