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Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces

✍ Scribed by G Lucovsky; H Niimi; Y Wu; H Yang


Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
667 KB
Volume
159-160
Category
Article
ISSN
0169-4332

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