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Tuning the shape and damage in ion-beam induced ripples on silicon

✍ Scribed by Biermanns, Andreas ;Hanisch, Antje ;Grenzer, Jörg ;Metzger, Till Hartmut ;Pietsch, Ullrich

Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
508 KB
Volume
208
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

We investigate the influence of ion beam parameters on the ripple formation on Si(001) surfaces after bombardment with Xe^+^ ions of 25 keV kinetic energy using a scanning ion beam system. By combining grazing incidence X‐ray diffraction, small angle scattering and X‐ray reflectivity, we show that during ion irradiation with 70° off‐normal angle of incidence, changing the size of the irradiated area leads to an increased number of defects at the interface towards crystalline material. At 65° angle of incidence, the ripple amplitude grows.

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## Abstract We report on in‐situ investigations of a recrystallization process of amorphous and damaged crystalline parts generated during ion‐beam induced rippling on a Si(100) surface. The ripple structure was created by 60 keV ^40^Ar^+^ irradiation with a dose of ∼5 × 10^17^ ions/cm^2^ at ion in