✦ LIBER ✦
Is there an influence of ion-beam-induced interfacial amorphization on the a/c-interface depth in silicon at common implantation energies?
✍ Scribed by G. Otto; G. Hobler; P. Pongratz; L. Palmetshofer
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 681 KB
- Volume
- 253
- Category
- Article
- ISSN
- 0168-583X
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