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Ion-beam induced annealing of radiation damage in silicon on sapphire

✍ Scribed by B. Svensson; J. Linnros; G. Holmén


Publisher
Elsevier Science
Year
1983
Weight
373 KB
Volume
209-210
Category
Article
ISSN
0167-5087

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Previous studies showed that reactive ion beam (RIB) pretreatment of sapphire prior to GaN deposition results in the reduction of dislocation density in the GaN film. It was also found that an amorphous phase remained at the interface region after the GaN deposition at high temperature. Annealing wa