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Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs

✍ Scribed by Łukasz Piskorski; Michał Wasiak; Robert P. Sarzała; Włodzimierz Nakwaski


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
374 KB
Volume
281
Category
Article
ISSN
0030-4018

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The effect of rapid thermal annealing on InAs quantum dots (QDs) capped with In 0.4 Ga 0.6 As/GaAs layer has been investigated by photoluminescence (PL). An unusual red shift of the PL emission peak has been observed for an annealing temperature (T a ) of 650 -C together with a pronounced improvemen