Confinement effects in strain-induced InGaAs/GaAs quantum dots
β Scribed by Hong-Wen Ren; Selvakumar V Nair; Jeong-Sik Lee; Shigeo Sugou; Tsuyoshi Okuno; Kazuhiro Nishbayashi; Yasuaki Masumoto
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 147 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1386-9477
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π SIMILAR VOLUMES
An effective approach for describing the electronic structure of InGaAs/GaAs quantum dots (QDs) is presented. We model QDs based on a single sub-band approach with an energy-dependent electron effective mass. The model assumes that the total effect of inter-band interactions, strain and piezoelectri
Suppressed relaxation in strongly confined InGaAs/GaAs quantum dots (QDs) was investigated by resonantly excited time-resolved photoluminescence spectroscopy. Hot exciton recombination and temperature-dependent relaxation are demonstrated supporting multi-phonon processes to dominate the relaxation
The effects of strain on the carrier confinement profile of disordered InGaAs/GaAs single quantum wells, assuming an error function compositional profile after interdiffusion, are studied here. Details are given showing how strain and disonder modify the confinement profile, the ground state transit