𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Tungsten metallization technology for high temperature silicon-on-insulator devices

✍ Scribed by Jian Chen; J.-P. Colinge

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
229 KB
Volume
29
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Silicon-on-insulator technology for high
Silicon-on-insulator technology for high-temperature, smart-power applications
✍ Jacek Korec πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 538 KB

The motivation to develop high-temperature resistant smart-power products and the impact of silicon-on-insulator (SOI) technology are discussed. The electrical and thermal behaviour of devices on SOI-substrates is illustrated, with examples, showing that smart-power integrated circuits can be design

Gas sensors for high temperature operati
Gas sensors for high temperature operation based on metal oxide silicon carbide (MOSiC) devices
✍ A. Arbab; A. Spetz; I. LundstrΓΆm πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 441 KB

Catalytic metal gate-silicon dioxide-silicon carbide (MOSiC) capacitors operating to about 800 "C are used as high temperature gas sensor devices. Hydrogen or hydrogen containing molecules, which are dissociated on the catalytic metal surface, create a decrease of the flat band voltage of the MOS ca