Gas sensors for high temperature operation based on metal oxide silicon carbide (MOSiC) devices

✍ Scribed by A. Arbab; A. Spetz; I. Lundström

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 441 KB
• Volume: 15
• Category: Article
• ISSN: 0925-4005
• DOI: 10.1016/0925-4005(93)85022-3

✦ Synopsis

Catalytic metal gate-silicon dioxide-silicon carbide (MOSiC) capacitors operating to about 800 "C are used as high temperature gas sensor devices. Hydrogen or hydrogen containing molecules, which are dissociated on the catalytic metal surface, create a decrease of the flat band voltage of the MOS capacitor. The MOSiC devices with a platinum gate respond to saturated hydrocarbons in air at concentrations well below the explosion limits.