An important advantage of silicon carbide as a material for power electronics is its extremely high electric field strength. The practical use of this advantage requires the elimination of regions of high electric field concentration in the design of power devices and efficient device passivation. L
β¦ LIBER β¦
Investigations on high temperature polyimide potentialities for silicon carbide power device passivation
β Scribed by Samir Zelmat; Marie-Laure Locatelli; Thierry Lebey; Sombel Diaham
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 235 KB
- Volume
- 83
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
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Catalytic metal gate-silicon dioxide-silicon carbide (MOSiC) capacitors operating to about 800 "C are used as high temperature gas sensor devices. Hydrogen or hydrogen containing molecules, which are dissociated on the catalytic metal surface, create a decrease of the flat band voltage of the MOS ca