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Tuneable photoluminescence, raman spectroscopy and electrical properties of GaAs doping superlattices

✍ Scribed by H.W Kunert; D.J Brink; J Matjila; T.S Modise

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
83 KB
Volume
25
Category
Article
ISSN
0749-6036

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✦ Synopsis

Optical properties of three GaAs doping superlattices (SLs) were studied by low and high temperature photoluminescence (PL) as well as inelastic light scattering. A new optically active transition has been observed at 1.48 eV and the high temperature behaviour of the main e-(Zn)h band has been studied. Electrical properties were monitored by current-voltage, resistivity and Hall measurements. This showed a strong variation of carrier concentration in the p-layers associated with mixed electron-hole conduction. The influence of Ξ±-particle irradiation on the superlattice structures was also investigated.

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