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Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC

✍ Scribed by Hrishikesh Das; Galyna Melnychuk; Yaroslav Koshka


Book ID
108166072
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
718 KB
Volume
312
Category
Article
ISSN
0022-0248

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