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Low temperature reaction of point defects in ion irradiated 4H–SiC

✍ Scribed by Litrico, G.; Izzo, G.; Calcagno, L.; Via, F. La; Foti, G.

Book ID: 123539089
Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 322 KB
Volume: 18
Category: Article
ISSN: 0925-9635
DOI: 10.1016/j.diamond.2008.08.011

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