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Trapezoid defect in 4H–SiC epilayers

✍ Scribed by R.A. Berechman; S. Chung; G. Chung; E. Sanchez; N.A. Mahadik; R.E. Stahlbush; M. Skowronski


Book ID
116630060
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
386 KB
Volume
338
Category
Article
ISSN
0022-0248

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Characterization of major in-grown stack
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The optical properties of major in-grown stacking faults (IGSFs) in 4H-SiC epilayers have been characterized by micro-photoluminescence (micro-PL) spectroscopy and its intensity mapping. Strong PL emissions from the IGSFs are observed even at room temperature. Three kinds of IGSFs have been identifi